Semiconductors

Monday, October 16, 2006

Deposition Process in Semiconductor Manufacturing

For the deposition of conducting and insulating materials in semiconductor processing, a wide range of different techniques is used. Among them, physical vapor deposition (PVD) and chemical vapor deposition (CVD) are the most important ones.
Materials in semiconductor manufacturing that can be deposited by CVD are for example: Silicon dioxide, silicon nitride, polysilicon, tungsten, copper, titanium nitride, aluminum.
Examples for CVD processes
Materials in semiconductor manufacturing that can be deposited using PVD are for example: aluminum, titanium, titanium nitride, tantalum, copper.
Sputter reactor
Usually the conformality (perfect conformality means, that for all positions at the device surface the same layer thickness is achieved) of CVD layers is much better than the conformality of PVD layers. This is demonstrated by the 2 movies: the first one shows a 3D simulation of a sputter deposition of aluminum into a contact hole, the second one shows a 3D simulation of tungsten CVD into the same contact hole. The CVD process yields better layer conformality than the PVD process. The 3D simulations shown in the movies have been carried out using the topography simulator SC-TOP from the software house SIGMA-C. Within SC-TOP, a 3D module for layer deposition developed at FhG-IIS-B is used.

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